Jpn. J. Appl. Phys. 13 (1974) pp. 1003-1004  |Next Article|  |Table of Contents|
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Short Note

Annealing Behavior of Defects in Electron-Irradiated p-Type CdTe

Tsunemasa Taguchi, Junji Shirafuji and Yoshio Inuishi

(Received March 4, 1974)

URL: http://jjap.jsap.jp/link?JJAP/13/1003/
DOI: 10.1143/JJAP.13.1003

References | Citing Articles (5)

1. T. Taguchi, J. Shirafuji and Y. Inuishi: Proc. Intern. Conf. Defects in Semiconductors (The Institute of Physics, Reading, 1972) p. 407.
2. T. Taguchi, J. Shirafuji and Y. Inuishi: Jpn. J. Appl. Phys. 12 (1973) 1558[JSAP].
3. F. J. Bryant, A. F. J. Cox and E. Webster: J. Phys. C 2 (1968) 1737[IoP STACKS].
4. U. V. Desnica and N. B. Urli: Phys. Rev. B6 (1972) 3044[APS].