Jpn. J. Appl. Phys. 13 (1974) pp. 417-423  |Next Article|  |Table of Contents|
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Phase Study on Binary System Ga-Se

Hiromichi Suzuki and Ryûichi Mori

(Received May 8, 1973; revised October 19, 1973)

The phase diagram of the system Ga-Se has been determined by the differential thermal analysis (DTA). The main features of the diagram are as follows: (1) the melting point of GaSe is 938±3°C and Ga₂Se₃ is 1005±3°C. (2) the monotectic transition occurs at 915°C in the lower composition region than 50 at.%Se. (3) the eutectic is formed at 884°C in the composition region between GaSe and Ga₂Se₃. (4) the solidified samples in the region between Ga₂Se₃ and Se consist of mixtures of Ga₂Se₃ and Se. At higher selenium composition, the DTA peaks observed at about 140°C and 45°C probably correspond to the crystallization and the glass transition of selenium respectively. In the composition region less than 50 at.%Se, the sublimation products consist of gallium and GaSe. The phases of Ga₂Se and Ga₃Se₂ reported by other authors are not observed.

URL: http://jjap.jsap.jp/link?JJAP/13/417/
DOI: 10.1143/JJAP.13.417

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