Jpn. J. Appl. Phys. 15 (1976) pp. 1253-1262  |Next Article|  |Table of Contents|
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An Analytical Treatment on the Pattern Formation Process by Sputter Etching with a Mask

Seitaro Matsuo

(Received April 11, 1975)

The pattern formation process, in which a substrate with a patterned mask is sputter-etched, is investigated by means of a theoretical analysis based on the dependence of the etch rate on the angle of ton incidence V(θ). By introducing a characteristic curve, determined only by function V(θ), the cross-sectional profile generated by masking cart be predicted. For various factors, such as the etch rates of the mask and the substrate V₁ and V₂ and the inclination angle of the mask pattern edge θ₁, the side-wall slope of a pattern machined into the substrate surface θ₂ mostly depends only on the ratio of the etch rates V₂/V₁, and it increases discontinuously for V₂/V₁>1. Depending on whether V₁<V₂ or V₁>V₂, the pattern formation processes are classified into two types. High resolution and sharply defined patterns are usually obtained under the condition V₁<V₂.

URL: http://jjap.jsap.jp/link?JJAP/15/1253/
DOI: 10.1143/JJAP.15.1253

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