Jpn. J. Appl. Phys. 15 (1976) pp. 1305-1308  |Next Article|  |Table of Contents|
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Thermal Expansion Coefficient of Boron Monophosphide

Takashi Mizutani, Jun Ohsawa, Tatau Nishinaga and Susumu Uchiyama

(Received February 16, 1976)

Thermal expansion of BP epitaxially-grown on Si{111} and Si{100} substrates has been investigated by using a high-temperature X-ray diffractometer. The coefficient α varies from (4.0±0.3)×10^-6 to (6.2±0.3)×10^-6 K^-1 in the tempeature range of 400–800 K. The unit-cell dimension of BP on Si{111} is about 0.1 % larger than that of BP on Si{100}.

URL: http://jjap.jsap.jp/link?JJAP/15/1305/
DOI: 10.1143/JJAP.15.1305

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