Jpn. J. Appl. Phys. 16 (1977) pp. 1307-1311  |Next Article|  |Table of Contents|
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Detection of SiO₂^- Ions from SiO₂-Si Interface by Means of SIMS

Kazumitsu Nakamura, Hiroshi Hirose, Atsushi Shibata and Hifumi Tamura¹

(Received March 11, 1977)

Analytical conditions for sensitive detection of molecular ions are examined using thin oxide films grown naturally in air on silicon single crystal surfaces. This is carried out to clarify the behavior of these ions in SIMS. It is found that molecular ions can be detected more sensitively under the condition of the low energy primary ion beam incident at large angles. Secondary molecular ions have energies several electron volts lower than elemental secondary ions.
SiO₂^-, and SiO₃^-, ions are hardly detected in 1500 Å thick CVD oxide layers, but are sensitively detected at the SiO₂-Si interface and also in naturally oxidized layers. This result suggests that the chemical composition of the CVD oxide interface is similar to that of the natural oxide on silicon single crystals.

URL: http://jjap.jsap.jp/link?JJAP/16/1307/
DOI: 10.1143/JJAP.16.1307

References | Citing Articles (2)

1. A. Benninghoven: Surf. Sci. 53 (1975) 596.
2. Y. Yaegashi and K. Inaguma: National Technical Report 23 (1977) 116.
3. K. Nakamura, H. Tamura and T. Kondo: Jpn. J. Appl. Phys. 13 (1974) 917[JSAP].
4. H. Tamura, T. Kondo and T. Hirano: Proc. Intern. Conf. on X-Ray Optics and Microanalysis, Osaka, 1971 (University of Tokyo Press, 1972) p. 423.
5. R. Matsumoto, K. Sato and K. Suzuki: Proc. 6th Intern. Vacuum Congress, Jpn. J. Appl. Phys. (1974) Suppl. 2, pt. 1, p. 389.