(Received April 14, 1977)
Characteristics of the dynamic lateral photovoltaic effect when the irradiation intensity is modulated with frequencies between 10∼100 kHz have been investigated experimentally and theoretically, using B-doped Si samples implanted with nitrogen-ions at 8 keV. It has been shown that the amplitude and phase of the lateral photovoltage (LPV) change remarkably as functions of the irradiation position and the modulation frequency, and that from this result junction capacitances can be measured. Besides the junction capacitance, the sheet resistivity and the junction conductance of an individual sample are derived in succession from the measurement of the LPV when the modulation frequency is put at zero. This new method of measurement is useful for checking or investigating junction properties especially when one of the layers of the junction (p or n) is extremely thin as in the present case.