Jpn. J. Appl. Phys. 16 (1977) pp. 1899-1905  |Next Article|  |Table of Contents|
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Secondary Defect Generation Suppression in Heavily Boron Implanted Silicon Wafers by HCl Oxidation

Yasuaki Hokari and Hiromitsu Shiraki

(Received May 10, 1977)

Heavily boron implanted silicon wafers, having a surface parallel to the {100} plane, were oxidized in dry O₂ mixed with different amounts of HCl (HCl oxidation) to clarify the HCl effect on suppressing generation of secondary defects nucleated by ion implantation. For low HCl concentrations, large size and high density stacking faults were produced. With HCl concentration increase, stacking fault size became smaller without changing its density. At high HCl concentration (6%), complete generation suppression of the faults and effective secondary defect nuclei elimination were accomplished. A speculative discussion on the fault size reduction, fault generation suppression and fault nuclei elimination is given.

URL: http://jjap.jsap.jp/link?JJAP/16/1899/
DOI: 10.1143/JJAP.16.1899

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