Jpn. J. Appl. Phys. 16 (1977) pp. 253-257  |Next Article|  |Table of Contents|
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Photovoltaic Effect Observed on the Construction of Metal-Amorphous In_xSe_1-x Thin Film–SnO₂ System

Tran Tri Nang, Tatsuhiko Matsushita¹, Masahiro Okuda and Akio Suzuki¹

(Received June 24, 1976; revised August 16, 1976)

Photovoltages as a function of light intensity and wavelength have been studied on the system of metal-amorphous In_xSe_1-x thin film-SnO₂, where the metal electrodes of Au, Sb, Al, Ag, In, and Cu were used. For all except the Sb electrode, the system had a positive photovoltage at short wavelength and a negative one at longer wavelength. Among these electrodes, the construction having the top electrode of Sb exhibited the best photovoltaic characteristic; next was the system with the Au electrode. The photovoltage increased first linearly and then logarithmically with the photon flux. A considerable photovoltage was obtained for a contact with x=0.2. A tentative band model for a consistent explanation of the experimental data is postulated.

URL: http://jjap.jsap.jp/link?JJAP/16/253/
DOI: 10.1143/JJAP.16.253

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