Jpn. J. Appl. Phys. 16 (1977) pp. 253-257 |Next Article| |Table of Contents|
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Photovoltaic Effect Observed on the Construction of Metal-Amorphous InxSe1-x Thin Film–SnO2 System
Department of Electrical Engineering, College of Engineering, University of Osaka Prefecture
1Department of Traffic Machinery, College of Engineering, Osaka Industrial University
(Received June 24, 1976; revised August 16, 1976)
Photovoltages as a function of light intensity and wavelength have been studied on the system of metal-amorphous InxSe1-x thin film-SnO2, where the metal electrodes of Au, Sb, Al, Ag, In, and Cu were used. For all except the Sb electrode, the system had a positive photovoltage at short wavelength and a negative one at longer wavelength. Among these electrodes, the construction having the top electrode of Sb exhibited the best photovoltaic characteristic; next was the system with the Au electrode. The photovoltage increased first linearly and then logarithmically with the photon flux. A considerable photovoltage was obtained for a contact with x=0.2. A tentative band model for a consistent explanation of the experimental data is postulated.
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