Quick Search: Journal  Author  Title/Abstract  Vol./Year 

Jpn. J. Appl. Phys. 17 (1978) pp. 1301-1315  |Next Article|  |Table of Contents|
|Full Text PDF: FREE (2170K)|

Invited Review Paper

Nature and Annealing Behavior of Disorders in Ion Implanted Silicon

Takashi Tokuyama, Masanobu Miyao and Naotsugu Yoshihiro

Central Research Laboratory, Hitachi Ltd.

(Received December 20, 1977)

A comprehensive review is given on the studies of the nature and low temperature(≈500°C) annealing behavior of disorders generated in silicon single crystal substrates during impurity ion implantation. Interaction of disorders and impurity atoms during annealing treatment is analysed over each layer along ion trajectories. This is because the concentrations of both disorders and implanted impurity atoms have unique distribution profiles in the substrate. On the assumption that a carrier compensation center is left where the recovery of each implantation generated amorphous cluster occurs, it is found to be essential, for the electrical activation of implanted impurity atoms, that spatial overlapping of the amorphous clusters occurs. Excess vacancies generated during annealing from amorphous layers are thought to thought to contribute to the anomalous behavior of solid solubility of impurity atoms involved in regrown layers. A better understanding of the phenomena that govern implantation and subsequent annealing offered would open a way for new applications of implantation technology.

URL: http://jjap.jsap.jp/link?JJAP/17/1301/
DOI: 10.1143/JJAP.17.1301


|Full Text PDF: FREE (2170K)|  Citation:

References | Citing Articles (17)

  1. T. Tokuyama: Ion Implantation in Semiconductors 1976, ed. F. Chernow, J. Borders and D. K. Brice (Plenum, New York, 1977) p. 519.
  2. D. Aitken: Proc. 7th Int. Conf. Electron and Ion Beam Sci. Technol. (Electrochem. Soc., Princeton, 1976) p. 504.
  3. G. Ryding, A. B. Wittkower and P. H. Rose: Proc. 7th Int. Conf. Electron and Ion Beam Sci. Technol. (Electrochem. Soc., Princeton, 1976) p. 518.
  4. N. Natsuaki, K. Ohyu and T. Tokuyama: to be published in Rev. Sci. Instrum. 49 (1978) No. 9.
  5. W. N. Hammer and E. A. Michel: J. Appl. Phys. 47 (1976) 2161[AIP Scitation].
  6. F. H. Eisen and L. T. Chadderton, ed.: Ion Implantation (Gordon and Beach, New York, 1971).
  7. I. Ruge and J. Graul, ed.: Ion Implantation in Semiconductors (Springer, Berlin, 1971).
  8. B. L. Crowder, ed.: Ion Implantation in Semiconductors and Other Materials (Plenum, New York, 1973).
  9. S. Namba, ed.: Ion Implantation in Semiconductors (Plenum, New York, 1975).
  10. F. Chernow, J. Borders and D. K. Brice, ed.: Ion Implantation in Semiconductors 1976 (Plenum, New York, 1977).
  11. Symposium “Ion Implantation in Semiconductors” held at Inst. Phys. Chem. Res. (Tokyo) No. 1 (1970), No. 2 (1971), No. 3 (1972), No. 4 (1973), No. 5 (1974), No. 6 (1975), No. 7 (1976) and No. 8 (1977), No. 9 (1978) [in Japanese].
  12. Proc. US-Japan Sci. Seminar “Ion Implantation in Semiconductors” ed. S. Namba (Japan Soc. Prom. Sci., 1972).
  13. J. W. Mayer, L. Eriksson and J. A. Davies: Ion Implantation in Semiconductors (Academic Press, New York, 1970).
  14. G. Dearnaley, J. H. Freeman, R. S. Nelson and J. Stephen: Ion Implantation (North Holland, Amsterdam, 1973).
  15. P. D. Townsend, J. C. Kelly and N. E. W. Hartley: Ion Implantation, Sputtering and Their Applications (Academic Press, London, 1976).
  16. J. F. Gibbons: Proc. IEEE 56 (1968) 295.
  17. J. F. Gibbons: Proc. IEEE 60 (1972) 1062.
  18. M. Tamura: Philos. Mag. 35 (1977) 663.
  19. G. H. Kinchin and R. S. Pease: Rep. Progr. Phys. 18 (1955) 2.
  20. L. T. Chadderton: Radiation Damage in Crystals (John Wiley and Sons, New York, 1965).
  21. P. V. Pavlov, D. I. Tetel'baum, E. I. Zorin and V. I. Alekseev: Sov. Phys. Solid State 8 (1967) 2141.
  22. A. Desalvo, R. Rosa and F. Zignani: Rad. Effects 27 (1975) 89.
  23. M. Miyao, N. Yoshihiro, T. Tokuyama and T. Mitsuishi: J. Appl. Phys. 49 (1978) 2573[AIP Scitation].
  24. M. Miyao, T. Miyazaki and T. Tokuyama: Jpn. J. Appl. Phys. 17 (1978) 955[JSAP].
  25. N. Yoshihiro, M. Miyao and T. Tokuyama: 8th Symp. “Ion Implantation in Semiconductors” held at Inst. Phys. Chem. Res. (1977) p. 31 [in Japanese].
  26. F. F. Morehead Jr. and B. L. Crowder: Ion Implantation, ed. F. H. Eisen and L. T. Chadderton (Gordon and Beach, New York, 1971) p. 25.
  27. T. Tsurushima and H. Tanoue: J. Phys. Soc. Jpn. 31 (1971) 1695.
  28. M. Miyao, N. Natsuaki, N. Yoshihiro, M. Tamura and T. Tokuyama: Proc. 7th Conf. Solid State Devices, Tokyo, 1975, Jpn. J. Appl. Phys. 15 (1976) Suppl. 15–1, p. 57[JSAP].
  29. T. Mitsuishi, Y. Sasaki and H. Asami: Jpn. J. Appl. Phys. 16 (1977) 367[JSAP].
  30. F. F. Morehead Jr., B. L. Crowder and R. S. Title: J. Appl. Phys. 43 (1972) 112[AIP Scitation].
  31. J. W. Mayer, L. Eriksson, S. T. Picraux and J. A. Davies: Canad. J. Phys. 46 (1968) 663.
  32. L. Csepregi, J. W. Mayer and T. W. Sigmon: Appl. Phys. Lett. 29 (1976) 92[AIP Scitation].
  33. L. Csepregi, E. F. Kennedy, T. G. Gallagher, J. W. Mayer and T. W. Sigmon: J. Appl. Phys. 48 (1977) 4234[AIP Scitation].
  34. E. F. Kennedy, L. Csepregi, J. W. Mayer and T. W. Sigmon: J. Appl. Phys. 48 (1977) 4241[AIP Scitation].
  35. L. Csepregi, J. W. Mayer and T. W. Sigmon: Phys. Lett. 54A (1975) 157.
  36. F. Cembali, R. Galloni and F. Zignani: Rad. Effects 26 (1975) 161.
  37. K. L. Wang: Appl. Phys. Lett. 29 (1976) 700[AIP Scitation].
  38. C. E. Christodoulides, W. A. Grant and J. S. Williams: Appl. Phys. Lett. 30 (1977) 322[AIP Scitation].
  39. M. D. Matthews: J. Mater. Sci. 4 (1969) 997.
  40. L. Chadderton and J. L. Whitton: Rad. Effects 23 (1974) 63.
  41. R. Prissinger, S. Kalbitzer and H. Krautle: Ion Implantation in Semiconductors, ed. S. Namba (Plenum, New York, 1975) p. 547.
  42. L. D. Glowinski, K. N. Tu and P. S. Ho: Appl. Phys. Lett. 28 (1976) 312[AIP Scitation].
  43. E. F. Kennedy, L. Csepregi, T. Gallagher and J. W. Mayer: 5th International Conf. Ion Impl. in Semicond. Other Materials, VI-13, Boulder Col. (Aug. 1976).
  44. M. Miyao, N. Yoshihiro, T. Tokuyama and T. Mitsuishi: 8th Symp. “Ion Implantation in Semiconductors” held at Inst. Phys. Chem. Res. (1977) p. 27 [in Japanese].
  45. K. Naoi: M. E. E. Thesis, Gunma Univ. Mar., 1977 [in Japanese].
  46. J. M. Shannon, R. A. Ford and G. A. Gard: Rad. Effects 6 (1970) 217.
  47. J. C. Irvin: Bell Syst. Tech. J. 41 (1962) 387.
  48. H. Kodera: Electrical and Electronic Communication Hand Book (Inst. Electrical Electron. Commun. Eng. Japan, to be published in 1979) [in Japanese].
  49. T. Tsuchimoto, K. Itoh, T. Morita and M. Ohno: 4-th Symposium on Ion Implantation in Semiconductors, held at Inst. Phys. Chem. Res. (Feb. 1973) p. 183 [in Japanese].
  50. F. A. Trumbore: Bell Syst. Tech. J. 39 (1960) 205.
  51. F. N. Schwettmann and D. L. Kendall: Appl. Phys. Lett. 19 (1971) 218[AIP Scitation].
  52. H. J. Stein, F. L. Vook, D. K. Brice, J. A. Borders and S. T. Picraux: Rad. Effects 6 (1970) 19.
  53. G. Fladda, K. Bjorkqvist, L. Eriksson and D. Sigmund: Appl. Phys. Lett. 16 (1970) 313[AIP Scitation].
  54. N. Yoshihiro, T. Ikeda, M. Tamura and T. Tokuyama: Proc. US-Japan Sci. Seminar “Ion Implantation in Semiconductors” ed. S. Namba (Japan Soc. Prom. Sci., 1972) p. 33.
  55. S. M. Davidson and G. R. Booker: Rad. Effects 6 (1970) 33.
  56. L. Csepregi, W. K. Chu, H. Muller, J. W. Mayer and T. W. Sigmon: Rad. Effects 28 (1976) 227.
  57. K. Uda and M. Kamoshida: J. Appl. Phys. 48 (1977) 18[AIP Scitation].
  58. A. R. Kirkpatrick, J. A. Minnucci, T. S. Shaughnessy and A. C. Greenwald: Proc. 12th IEEE Photovoltaic Specialists Conf. (1977) p. 299.
  59. O. G. Kutukova and L. N. Strel'tsov: Soviet Phys. Semiconductors 10 (1976) 265.
  60. A. Kh. Antonenko, N. N. Gerasimenko, A. V. Drurechenskii, L. S. Smirov and G. M. Tseitlin: Soviet Phys. Semiconductors 10 (1976) 81.
|TOP|  |Next Article|  |Table of Contents| |JJAP Home|
Copyright © 2013 The Japan Society of Applied Physics
Contact Information