Jpn. J. Appl. Phys. 17 (1978) pp. 779-785 |Next Article| |Table of Contents|
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(Received September 12, 1977)
The present paper reports on the growth of zinc sulpho-selenide solid solutions on ZnS and ZnSe substrates by a closed tube, solid-state-diffusion technique. The composition of the overlayer prepared by the diffusion of Se into ZnS is uniform throughout a depth of the order of 5 µm. On the other hand, the overlayer prepared by the diffusion of S into ZnSe does not have such uniform composition as in the case of the diffusion of Se: the variation in composition is ∼5%. Below the overlayer, a transition region with a varying composition was formed. The depth profile of the composition of the transition region is approximated by a diffusion theory, which provides the diffusion constant of Se into ZnS at a temperature 1070°C, that is 5×10-13 cm2/sec, under the condition that S2 and Se2 pressures are PS2=0.75 atm and PSe2=1.75 atm. The diffusion constant of S into ZnSe is 8×10-12 cm2/sec at 1060°C under PS2=0.57 and PSe2=1.53 atm.
URL:
http://jjap.jsap.jp/link?JJAP/17/779/
DOI: 10.1143/JJAP.17.779