Jpn. J. Appl. Phys. 18 (1979) pp. 1275-1280  |Next Article|  |Table of Contents|
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Cryosar-Like Behaviour of Electron-Irradiated GaP LED

Yutaka Fukuoka, Takao Wada,¹ Sashiro Uemura² and Masahiro Kakehi¹

(Received August 14, 1978)

When GaP red electroluminescent diodes are irradiated below a total dose of ∼10¹⁶ electrons/cm² at 7 MeV, negative resistance appears at 77 K, but at room temperature the V–I characteristics behave normally. The initial electric field strength of breakdown, the critical field E_c, increases with decreasing temperature and increasing electron dose. But the sustaining field E_s, the field after breakdown, is nearly constant, independent of the temperature and irradiation dose. The properties of E_c and E_s can be explained well by impact ionization based on Kurosawa's theory of low-temperature breakdown in compensated germanium.

URL: http://jjap.jsap.jp/link?JJAP/18/1275/
DOI: 10.1143/JJAP.18.1275

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