Jpn. J. Appl. Phys. 18 (1979) pp. 549-552  |Next Article|  |Table of Contents|
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Luminescences from Solution-Grown Al_xGa_1-xP Alloys

Hajimu Sonomura and Takeshi Miyauchi

(Received November 17, 1978)

Single crystals of Al_xGa_1-xP alloys with several compositions up to x=0.74 are prepared by the solution growth method. Photoluminescence peaks at 77 K lie at about 1.96 eV for undoped n-type alloys, and near 2.1 eV for Zn-doped p-type alloys. The peaks show almost no shift as x increases. Zn-doped p-type alloys also exhibit electroluminescence when carriers are injected into the crystals. The peak energy nearly follows the energy gap with increasing x, in contrast to the photoluminescences. The photoluminescent emissions are assigned to the Si–Si pair for the 1.96 eV peak, and to Si–Zn and Si–C pairs for the 2.1 eV peaks. Transitions of free electrons to neutral Zn acceptors might play a role in the electroluminescence. The conductivities of the alloys are of the same order as that of GaP.

URL: http://jjap.jsap.jp/link?JJAP/18/549/
DOI: 10.1143/JJAP.18.549

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