Jpn. J. Appl. Phys. 19 (1980) pp. 1627-1632  |Next Article|  |Table of Contents|
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Origin of Si(LMM) Auger Electron Emission from Silicon and Si-Alloys by keV Ar⁺ Ion Bombardment

Motohiro Iwami, Su Chol Kim, Yoshihide Kataoka, Takeshi Imura, Akio Hiraki and Fuminori Fujimoto¹

(Received October 15, 1979)

Si(LMM) Auger electrons emitted from specimens of pure silicon and several Si-alloys (Ni-Si, Pd-Si and Cu-Si) under keV Ar⁺ ion bombardment, were examined. In the Auger spectra from all specimens studied there were four peaks at energies of 92, 86, 76 and 66 eV. The Auger signal intensity varied considerably with both the incident angle and the energy of the primary ion beam. It is proposed that the Auger electrons are emitted from silicon atoms (or ions) just beneath the specimen surface but free from the bulk network.

URL: http://jjap.jsap.jp/link?JJAP/19/1627/
DOI: 10.1143/JJAP.19.1627

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