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Jpn. J. Appl. Phys. 19 (1980) pp. L305-L308  |Table of Contents|
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Electrical and Structural Properties of Phosphorous-Doped Glow-Discharge Si:F:H and Si:H Films

Akihisa Matsuda, Satoshi Yamasaki, Katsumi Nakagawa, Hideyo Okushi, Kazunobu Tanaka, Sigeru Iizima, Mitsuo Matsumura and Hideo Yamamoto

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    Boron Doping of Hydrogenated Silicon Thin Films
    Akihisa Matsuda, Mitsuo Matsumura, Satoshi Yamasaki, Hideo Yamamoto, Takeshi Imura, Hideyo Okushi, Sigeru Iizima and Kazunobu Tanaka
  130. Japanese Journal of Applied Physics 20 (1981) L439
    Structural Study on Amorphous-Microcrystalline Mixed-Phase Si:H Films
    Akihisa Matsuda, Toshihiko Yoshida, Satoshi Yamasaki and Kazunobu Tanaka
  131. Journal of Physics C Solid State Physics 14 (1981) 295
    S Veprek, Z Iqbal, H R Oswald, and A P Webb
  132. Physical Review B 24 (1981) 2038
    Effects of quantitative disorder on the electronic structures of Si and Ge
    Kazuyoshi Tanaka and Raphael Tsu

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