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Jpn. J. Appl. Phys. 19 (1980) pp. L309-L312  |Next Article|  |Table of Contents|
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Letter

Reflection Electron Microscope Observations of Dislocations and Surface Structure Phase Transition on Clean (111) Silicon Surfaces

Nobuyuki Osakabe, Katsumichi Yagi and Goro Honjo

Physics Department, Tokyo Institute of Technology

(Received April 14, 1980)

A recently reported surface study by means of ultra-high-vacuum reflection electron microscopy (Osakabe et al. : Surf. Sci. in press) was extended to further details of clean (111) silicon surfaces. A screw dislocation emergent at the surface was clearly identified as the place at which one surface step terminates with a characteristic line contrast. In the transformation between the (7×7) and (1×1) surface structures across 830°C, the surface steps act as nucleation sites : on cooling the (7×7) structure nucleates at the upper edge of the steps and grows along the upper terraces, while on heating the reversed process takes place.

URL: http://jjap.jsap.jp/link?JJAP/19/L309/
DOI: 10.1143/JJAP.19.L309

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References | Citing Articles (46)

1. N. Osakabe, Y. Tanishiro, K. Yagi and G. Honjo: Surf. Sci. 97 (1980) in press.
2. J. V. Florio and W. D. Robertson: Surf. Sci. 22 (1970) 459.
3. S. Ino: Jpn. J. Appl. Phys. 16 (1977) 891[JSAP].
4. K. Takayanagi, K. Yagi, K. Kobayashi and G. Honjo: J. Phys. E 11 (1978) 441[IoP STACKS].
5. H. Shuman: Ultramicroscopy 2 (1977) 361.
6. A. R. Moon: Z. Naturforsch. 27 (1972) 390.
7. E. M. Yoffé: Philos. Mag. 6 (1961) 1147.
8. N. Osakabe, Y. Tanishiro, K. Yagi and G. Honjo: in preparation.
9. A. Blandin: Phys. Lett. 45A (1973) 275.
10. N. Osakabe, Y. Tanishiro, K. Yagi and G. Honjo: in preparation.

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