Jpn. J. Appl. Phys. 19 (1980) pp. L513-L516 |Next Article| |Table of Contents|
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Letter
The Density of Localized States in Amorphous InxSe1-x Thin Films
Hiroyoshi Naito,
Masahiro Okuda,
Tatsuhiko Matsushita and
Tanehiro Nakau
Department of Electronics, College of Engineering, University of Osaka Prefecture
(Received June 16, 1980; revised July 11, 1980)
The field effect method has been used to determine the density of localized states in amorphous InxSe1-x thin films for the range of the composition 0.05≤x≤0.4. This method provides a monotonic density distribution of localized states below the thermal equilibrium Fermi level for each specimen. Concerning the compositional dependence on the density of states, experimental results show that the density of states has a minimum value for the amorphous In0.2Se0.8 film and a maximum value for the amorphous In0.3Se0.7 film. These results may be explained by the random network model with the In-Se and Se-Se bonds.
URL:
http://jjap.jsap.jp/link?JJAP/19/L513/
DOI: 10.1143/JJAP.19.L513
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