Jpn. J. Appl. Phys. 19 (1980) pp. L735-L738 |Next Article| |Table of Contents|
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Letter
Scattering Suppression and High-Mobility Effect of Size-Quantized Electrons in Ultrafine Semiconductor Wire Structures
Hiroyuki Sakaki
Institute of Industrial Science, University of Tokyo
(Received September 16, 1980)
Transport properties of electrons confined in ultrafine wire structures are studied theoretically. The scattering probability of such size-quantized electrons is calculated for Coulomb potential and is shown to be suppressed drastically because of the one-dimensional nature of the electronic motion in the wire. Mobilities are estimated to be well beyond 106 cm2/Vs for a properly-designed GaAs wire at low temperatures. The feasibility of preparing such ultrafine structures with and without ultrafine lithography is discussed.
URL:
http://jjap.jsap.jp/link?JJAP/19/L735/
DOI: 10.1143/JJAP.19.L735
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