Jpn. J. Appl. Phys. 2 (1963) pp. 809-811 |Next Article| |Table of Contents|
|Full Text PDF (322K)| |Buy This Article|
Short Note
Deterioration-Induced Slow Trap in GaAs Esaki Diodes
Akikazu Shibata
Sony Corporation Research Laboratory
(Received October 14, 1963)
URL:
http://jjap.jsap.jp/link?JJAP/2/809/
DOI: 10.1143/JJAP.2.809
- N. Holonyak, Jr., T. Selig and J. Smith: IRE Trans. ED-8 (1961) 427.
- A. G. Chynoweth, W. L. Feldmann and R. A. Logan:
Phys. Rev. 121 (1961) 684[APS].