Jpn. J. Appl. Phys. 2 (1963) pp. 809-811  |Next Article|  |Table of Contents|
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Short Note

Deterioration-Induced Slow Trap in GaAs Esaki Diodes

Akikazu Shibata

Sony Corporation Research Laboratory

(Received October 14, 1963)

URL: http://jjap.jsap.jp/link?JJAP/2/809/
DOI: 10.1143/JJAP.2.809


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References | Citing Articles (5)

  1. N. Holonyak, Jr., T. Selig and J. Smith: IRE Trans. ED-8 (1961) 427.
  2. A. G. Chynoweth, W. L. Feldmann and R. A. Logan: Phys. Rev. 121 (1961) 684[APS].

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