(Received February 18, 1981; accepted for publication May 23, 1981)
Liquid phase epitaxy of CuGaSe2 layers on ZnSe (111)A substrates with Bi and Pb solvents is described. Structural and compositional properties of the epilayers were investigated by means of X-ray diffraction, electron probe microanalysis and photoluminescence. The epilayers are composed of two layers of CuGaSe2-ZnSe solid solutions. The upper layers have the chalcopyrite structure whose lattice parameters are nearly the same as those of stoichiometric CuGaSe2, but the lower layers are considered to have the zincblende structure. Photoluminescence spectra with emission peaks at 750 and 800 nm were observed at 77 K for the upper and the lower layers, respectively.