Jpn. J. Appl. Phys. 20 (1981) pp. 1735-1740 |Next Article| |Table of Contents|
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Fabrication of SiO2 Grating Patterns with Vertical Sidewalls by SOR X-Ray Lithography and Reactive Ion-Beam Etching
Faculty of Engineering Science, Osaka University
(Received March 9, 1981; accepted for publication June 20, 1981)
SOR X-ray lithography is an effective means of obtaining surface relief structures with submicron line width, vertical sidewalls and large aspect ratios in resist, because it has advantages of high contrast and small beam divergence. Moreover, reactive ion-beam etching realizes a high fidelity pattern transfer from patterns delineated in resist into underlaying substrates. In this paper, it is shown that SiO2 grating patterns with sharp vertical sidewalls can be fabricated by CHF3 reactive ion-beam using masks of PMMA grating patterns replicated by SOR X-ray lithography. This result demonstrates that the combination of SOR X-ray lithography and reactive ion-beam etching is an excellent microfabrication technique.
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