Jpn. J. Appl. Phys. 20 (1981) pp. 1735-1740  |Next Article|  |Table of Contents|
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Fabrication of SiO₂ Grating Patterns with Vertical Sidewalls by SOR X-Ray Lithography and Reactive Ion-Beam Etching

Shinji Matsui, Kazuyuki Moriwaki, Noboru Masuda, Takehiro Nakamura, Hiroaki Aritome and Susumu Namba

(Received March 9, 1981; accepted for publication June 20, 1981)

SOR X-ray lithography is an effective means of obtaining surface relief structures with submicron line width, vertical sidewalls and large aspect ratios in resist, because it has advantages of high contrast and small beam divergence. Moreover, reactive ion-beam etching realizes a high fidelity pattern transfer from patterns delineated in resist into underlaying substrates. In this paper, it is shown that SiO₂ grating patterns with sharp vertical sidewalls can be fabricated by CHF₃ reactive ion-beam using masks of PMMA grating patterns replicated by SOR X-ray lithography. This result demonstrates that the combination of SOR X-ray lithography and reactive ion-beam etching is an excellent microfabrication technique.

URL: http://jjap.jsap.jp/link?JJAP/20/1735/
DOI: 10.1143/JJAP.20.1735

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