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Jpn. J. Appl. Phys. 20 (1981) pp. L623-L626  |Next Article|  |Table of Contents|
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Letter

Photoluminescence of an AlAs/GaAs Superlattice Grown by MBE in the 0.7–0.8 µm Wavelength Region

Tadao Ishibashi, Yoshifumi Suzuki and Hiroshi Okamoto

Musashino Electrical Communication Laboratory, Nippon Telegragh and Telephone Public Corporation

(Received July 13, 1981; accepted for publication August 11, 1981)

AlAs/GaAs superlattices were grown by molecular beam epitaxy with a GaAs quantum well width L_z of 20–160 Å. An X-ray diffraction technique is shown to be a practical and non-destructive method to measure L_z with in an accuracy of 10%. A photoluminescence measurement showed a sharply peaked structure (ΔE≦ 50 meV) and indicated that the main carrier recombination process at room temperature is from the n=1 electron quantum level to the n=1 heavy hole level. Carrier concentration dependence of the photoluminescence energy differs from the usual Burstein-Moss shift. The highest emission energy obtained was 1.77 eV (7000 Å).

URL: http://jjap.jsap.jp/link?JJAP/20/L623/
DOI: 10.1143/JJAP.20.L623

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References | Citing Articles (29)

1. W. T. Tsang, C. Weisbuch, R. C. Miller and R. Dingle: Appl. Phys. Lett. 35 (1979) 673[AIP Scitation].
2. B. A. Vojak, W. D. Laidig, N. Holonyak, Jr. and M. D. Camras: J. Appl. Phys. 52 (1981) 621[AIP Scitation].
3. A. Segmüller, P. Krishna and L. Esaki, J. Appl. Cryst. 10 (1977) 1.
4. H. Nagai: J. Appl. Phys. 45 (1974) 3789[AIP Scitation].

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