Jpn. J. Appl. Phys. 21 (1982) pp. 1283-1286 |Next Article| |Table of Contents|
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Dislocation Generation in the Initiation of Fractures in Silicon Crystals
Department of Crystalline Materials Science, Faculty of Engineering, Nagoya University
1Department of Metallurgy, Faculty of Engineering, Nagoya University
(Received January 25, 1982; accepted for publication June 19, 1982)
Notched silicon crystals were deformed in tension at elevated temperatures, and the incipient microplasticity associated with the notch was studied by in-situ X-ray topographic observation. Above a stress level of about 2 kg/mm2 at 700°C, a plastic zone was formed around the notch tip, accompanied by long-range elastic strain. Dislocations were generated on the slip planes parallel to the tensile axis by the operation of a bending moment induced around the notch tip mainly by the activity of two slip systems with the maximum Schmid factor, and the crack propagation is considered to break out as a result.
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