Jpn. J. Appl. Phys. 21 (1982) pp. 1283-1286  |Next Article|  |Table of Contents|
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Dislocation Generation in the Initiation of Fractures in Silicon Crystals

Yoichi Nishino and Toru Imura¹

(Received January 25, 1982; accepted for publication June 19, 1982)

Notched silicon crystals were deformed in tension at elevated temperatures, and the incipient microplasticity associated with the notch was studied by in-situ X-ray topographic observation. Above a stress level of about 2 kg/mm² at 700°C, a plastic zone was formed around the notch tip, accompanied by long-range elastic strain. Dislocations were generated on the slip planes parallel to the tensile axis by the operation of a bending moment induced around the notch tip mainly by the activity of two slip systems with the maximum Schmid factor, and the crack propagation is considered to break out as a result.

URL: http://jjap.jsap.jp/link?JJAP/21/1283/
DOI: 10.1143/JJAP.21.1283

References | Citing Articles (4)

1. Y. Nishino, M. Suzuki, T. Tono, H. Saka and T. Imura: Jpn. J. Appl. Phys. 20 (1981) 1533[JSAP].
2. H. Alexander and P. Haasen: Solid State Phys. 22 (1968) 27.
3. Y. Tsunekawa and S. Weissmann: Metall. Trans. 5 (1974) 1585.
4. S. Weissmann and T. Saka: Advances in X-Ray Analysis, eds. H. F. McMurdie, C. S. Barrett, J. B. Newkirk and C. O. Ruud (Plenum, New York, 1977) Vol. 20, p. 237.
5. H. Saka and T. Imura: Jpn. J. Appl. Phys. 9 (1970) 1185[JSAP].
6. Y. Ando and N. Kato: J. Appl. Cryst. 3 (1970) 74.
7. Y. Nishino, H. Saka and T. Imura: Phys. Status Solidi (a) 70 (1982) 729.