Jpn. J. Appl. Phys. 21 (1982) pp. 1616-1618  |Next Article|  |Table of Contents|
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Chemical Etching of Germanium with H₃PO₄–H₂O₂–H₂O Solution

Shuzo Kagawa, Takashi Mikawa and Takao Kaneda

(Received July 2, 1982; accepted for publication August 21, 1982)

An H₃PO₄–H₂O₂–H₂O solution is studied for possible use in the etching of germanium. The solution can be roughly classified into two ternary regions according to its etching characteristics: a (with a low H₂O₂ concentration) and b (with a high H₂O₂ concentration). Solutions in region b provide reproducible smooth and uniform surfaces. This solution can be used with SiO₂ films and photoresists as a preferential etching mask material without dissolution or separation. It is suitable for processing germanium devices.

URL: http://jjap.jsap.jp/link?JJAP/21/1616/
DOI: 10.1143/JJAP.21.1616

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