Jpn. J. Appl. Phys. 21 (1982) pp. 950-954  |Next Article|  |Table of Contents|
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An AlGaAs/GaAs Concentrator Solar Cell Operating at High Concentration Ratios without Forced Cooling

Kotaro Mitsui, Susumu Yoshida, Masahiro Yoshida, Takao Oda and Yoshinori Yukimoto

(Received February 10, 1982; accepted for publication March 20, 1982)

A 1×1 cm² p-AlGaAs/p-GaAs/n-GaAs concentrator solar cell operating at high concentration ratios without forced cooling is described. The cell has a fairly large junction depth (the thickness of the p-GaAs layer) of 3 µm which reduces the sheet resistance of the surface layer and permits the use of a relatively crude contact grid pattern which is easily fabricated. The cell has its highest fill factor of 0.889 at 50–100 suns and its highest efficiency of 22.7% at 50–200 suns, and also maintains a practical efficiency of 17.6% even at 1025 suns without forced cooling.

URL: http://jjap.jsap.jp/link?JJAP/21/950/
DOI: 10.1143/JJAP.21.950

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