Jpn. J. Appl. Phys. 21 (1982) pp. L46-L48 |Next Article| |Table of Contents|
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Letter
Liquid Phase Epitaxial Growth of CuGaTe2 on ZnSe from Bi Solution
Hiroshi Takenoshita,
Susumu Imai,
Tanehiro Nakau and
Masatoshi Nishira
Department of Electronics, College of Engineering, University of Osaka Prefecture
(Received November 11, 1981; revised manuscript revised November 27, 1981; accepted for publication December 19, 1981)
A CuGaTe2 layer was grown on ZnSe by liquid phase epitaxy from Bi solution. This combination produced a large lattice misfit and considerable lattice distortion. The optimum growth conditions were as follows: a maximum temperature of 530°C, a cooling rate of 0.5°C/min and the substrate orientation ZnSe(111)Se. The epitaxial growth was confirmed by electron diffraction, and the results of Hall measurements at 300 K gave σ=12.5 Ω-1-cm-1, µH=33.0 cm2/Vs and NA=2.40×1018 cm-3. From EPMA, (CuGaTe2)1-x–(2ZnSe)x alloys were found to form a solid solution. The thickness of the mixed crystal layer was 1.0 µm.
URL:
http://jjap.jsap.jp/link?JJAP/21/L46/
DOI: 10.1143/JJAP.21.L46
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