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Jpn. J. Appl. Phys. 21 (1982) pp. L476-L478  |Next Article|  |Table of Contents|
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Letter

Si and Sn Doping in Al_xGa_1-xAs Grown by MBE

Tadao Ishibashi, Seigo Tarucha and Hiroshi Okamoto

Musashino Electrical Communication Laboratory, NTT

(Received May 20, 1982; accepted for publication July 17, 1982)

Electrical properties of Si and Sn doped Al_xGa_1-xAs epitaxial films grown by MBE have been studied in the wide range of AlAs mole fraction. With a constant doping level, decrease in the carrier concentration was observed around the direct-indirect band crossover point, for Si-doped and Sn-doped Al_xGa_1-xAs. Abrupt increase in donor ionization energy E_D occurred in Si-doped Al_xGa_1-xAs films. These characteristics are similar to those reported for Te and Sn doped Al_xGa_1-xAs grown by LPE.

URL: http://jjap.jsap.jp/link?JJAP/21/L476/
DOI: 10.1143/JJAP.21.L476

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