Jpn. J. Appl. Phys. 22 (1983) pp. 1418-1421  |Next Article|  |Table of Contents|
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High Excitation Luminescences of Al_xGa_1-xP Compound Alloy

Hajimu Sonomura, Takayuki Nishimura, Hiromichi Horinaka and Takeshi Miyauchi

(Received February 17, 1983; accepted for publication June 18, 1983)

High excitation photoluminescences and high injection electroluminescences for the ternary compound alloy Al_xGa_1-xP have been measured. Emission peaks near the band edge, explained as being due to annihilation of excitons bound to N (nitrogen) isoelectronic impurities, have been observed for both luminescences at 80 K. The peaks shift little with increasing composition factor up to the middle composition region, and then disappear at larger factors. These effects can be explained by the hypothesis that an N atom which has a bond with an Al atom cannot serve as an electron trap, and that a number of GaP clusters as large as 100 Å estimated from the radius of the exciton are formed in the alloy, while the N isoelectronic impurity acts as a recombination center in the clusters only.

URL: http://jjap.jsap.jp/link?JJAP/22/1418/
DOI: 10.1143/JJAP.22.1418

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