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Jpn. J. Appl. Phys. 22 (1983) pp. L210-L212  |Next Article|  |Table of Contents|
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Letter

Low Temperature Chemical Vapor Deposition Method Utilizing an Electron Cyclotron Resonance Plasma

Seitaro Matsuo and Mikiho Kiuchi

Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

(Received September 14, 1982; revised manuscript revised February 16, 1983; accepted for publication March 19, 1983)

The plasma deposition apparatus developed in this study can realize a deposition of dense and high quality thin films, such as Si₃N₄ and SiO₂, without the need for substrate heating. It does this by enhancing the plasma excitation efficiency at low gas pressures (10^-4 Torr) and by the acceleration effect of ions with moderate energies (10 to 20 eV), using a microwave ECR (Electron Cyclotron Resonance) excited plasma, and a plasma stream extraction onto the specimen table by a divergent magnetic field method. The Si₃N₄ and SiO₂ films deposited are comparable to those prepared by high temperature CVD and thermal oxidation, respectively, in evaluations such as by buffered HF solution etch rate measurement.

URL: http://jjap.jsap.jp/link?JJAP/22/L210/
DOI: 10.1143/JJAP.22.L210

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References | Citing Articles (236)

1. A. K. Sinha, H. J. Levinstein, T. E. Smith, G. Quintana, and S. E. Haszko: J. Electrochem. Soc. 125 (1978) 601.
2. W. A. Lanford and M. J. Rand: J. Appl. Phys. 49 (1978) 2473[AIP Scitation].
3. A. C. Adams, F. B. Alexander, C. D. Capio, and R. E. Smith: J. Electrochem. Soc. 128 (1981) 1545.
4. T. Tsuchimoto: J. Vac. Sci. Technol. 15 (1978) 70[AIP Scitation].
5. Y. Sakamoto: Jpn. J. Appl. Phys. 16 (1977) 1993[JSAP].
6. R. Geller: Appl. Phys. Lett. 16 (1970) 401[AIP Scitation].
7. Y. Okamoto and H. Tamagawa: Rev. Sci. Instrum. 43 (1972) 1193[AIP Scitation].
8. K. Suzuki, S. Okudaira, N. Sakudo and I. Kanomata: Jpn. J. Appl. Phys. 16 (1977) 1979[JSAP].
9. H. Toyama, M. Okabayashi and H. Ishizuka: Plasma Phys. 10 (1968) 319.
10. S. Matsuo and Y. Adachi: Jpn. J. Appl. Phys. 21 (1982) L4[JSAP].

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