Jpn. J. Appl. Phys. 22 (1983) pp. L245-L247  |Next Article|  |Table of Contents|
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Letter

Transparent and Highly Conductive Films of ZnO Prepared by RF Sputtering

Kentaro Ito and Tatsuo Nakazawa

Department of Electronics, Faculty of Engineering, Shinshu University

(Received January 28, 1983; accepted for publication March 19, 1983)

Zinc oxide thin films with the resistivity of 5×10-3Ω·cm and the transparency of above 80% at the wavelength between 400 and 800 nm have been prepared by conventional rf sputtering in pure argon from a zinc oxide target. A close relation of their electrical characteristics with crystallographic characteristics is found using X-ray diffraction analysis. The low resistivity films consist of very small crystal grains, the c-axis of which is not preferentially oriented or is weakly oriented parallel to the substrate surface.

URL: http://jjap.jsap.jp/link?JJAP/22/L245/
DOI: 10.1143/JJAP.22.L245


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References | Citing Articles (30)

  1. J. Aranovich, A. Ortiz and R. H. Bube: J. Vac. Sci. Technol. 16 (1979) 994[AIP Scitation].
  2. O. Caporaletti: Solid State Commun. 42 (1982) 109.
  3. J. B. Webb, D. F. Williams and M. Buchanan : Appl. Phys. Lett. 39 (1981) 640[AIP Scitation].
  4. T. Minami, H. Nanto and S. Takata: Appl. Phys. Lett. 41 (1982) 958[AIP Scitation].
  5. J. H. Morgan and D. E. Brodie: Can. J. Phys. 60 (1982) 1387.

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