Jpn. J. Appl. Phys. 22 (1983) pp. L287-L288 |Next Article| |Table of Contents|
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Letter
A 100 kV Maskless Ion-Implantation System with an Au–Si–Be Liquid Metal Ion Source for III-V Compound Semiconductors
Eizo Miyauchi,
Hiroshi Arimoto,
Hisao Hashimoto,
Tsuneo Furuya and
Takao Utsumi
Optoelectronics Joint Research Laboratory
(Received March 2, 1983; accepted for publication April 23, 1983)
A newly developed Au–Si–Be liquid metal ion source has been incorporated to a 100 kV focused ion beam system. Among several ion species emitted from the single ion emitter, doubly ionized Si and Be have been selected by the crossed electric and magnetic field (E×B) mass separator and have been formed into a finely focused beam. This new system was found capable of focusing those ions down to a diameter of about 0.1 µm. It has also been found that, using the fine focusing for n- and p-doping, desired ion species (Si++ and Be++) can be exchanged simply by adjusting the electric field of the E×B mass separator.
URL:
http://jjap.jsap.jp/link?JJAP/22/L287/
DOI: 10.1143/JJAP.22.L287
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