Jpn. J. Appl. Phys. 23 (1984) pp. 1278-1286  |Next Article|  |Table of Contents|
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Effect of Substrate Temperature on Properties of Glow-Discharged Hydrogenated Amorphous Silicon

Junji Shirafuji, Mamoru Kuwagaki, Taka'aki Sato and Yoshio Inuishi

(Received March 19, 1984; accepted for publication July 21, 1984)

The substrate temperature dependence of the transport and photoelectric properties of glow-discharged hydrogenated amorphous silicon films has been studied in connection with the morphological heterogeneity in the films. The electron drift mobility at room temperature determined by the time-of-flight method increases exponentially as the substrate temperature is raised, and is possibly associated with the formation of a percolation path through the growth of small quasi-crystalline zones. In contrast with the exponential increase in the electron mobility, the lifetime, or the deep-level trapping time, of electrons shows a maximum at a substrate temperature of 200°C, in parallel with the ESR spin density and tail-to-tail luminescence intensity.

URL: http://jjap.jsap.jp/link?JJAP/23/1278/
DOI: 10.1143/JJAP.23.1278

References | Citing Articles (29)

1. W. E. Spear and P. G. LeComber: Solid State Commun. 17 (1975) 1193[CrossRef].
2. J. A. Reimer, R. W. Vaughan and J. C. Knights: Phys. Rev. Lett. 44 (1980) 193[APS].
3. H. R. Shank, F. R. Jeffrey and M. E. Lowry: Proc. 9th Int. Conf. Amorphous & Liquid Semiconductors, Grenoble, 1981, J. de Phys. 42 (1981) Colloq. C-4, Suppl. 10, p. 773.
4. M. L. Ludee: Phys. Status Solidi b 46 (1972) Kl.
5. M. L. Ludee and A. Howie: Philos. Mag. 25 (1972) 1001.
6. J. Shirafuji, H. Matsui, A. Narukawa and Y. Inuishi: Appl. Phys. Lett. 41 (1982) 535[AIP Scitation].
7. J. Shirafuji, H. Matsui, Y. Inuishi and N. Tanaka: Solid State Commun. 45 (1983) 577.
8. M. H. Brodsky: Solid State Commun. 36 (1980) 55.
9. J. Shirafuji, H. Matsui, Y. Inuishi and Y. Hamakawa: Jpn. J. Appl. Phys. 22 (1983) 775[JSAP].
10. A. Deneuville, J. C. Brugére and H. Hamdi: Proc. 9th Int. Conf. Amorphous & Liquid Semiconductors, Grenoble, 1981, J. de Phys. 42 (1981) Colloq. C-4, Suppl. 10, p. 733.
11. W. Paul and D. A. Anderson: Sol. Energy Mater. 5 (1981) 229.
12. J. C. Brugére and A. Deneuville: Proc. 9th Int. Conf. Amorphous & Liquid Semiconductors, Grenoble, 1981, J. de Phys. 42 (1981) Colloq. C-4, Suppl. 10, p. 339.
13. A. Matsuda: Proc. 10th Int. Conf. Amorphous & Liquid Semiconductors, Tokyo, 1983, J. Non-Cryst. Solids 59/60 (1983) 767.
14. S. Veprek, Z. Iqbal, H. R. Oswald and A. P. Webb: J. Phys. C: Solid State Phys. 14 (1981) 295[IoP STACKS].
15. T. Hamasaki, H. Kurita, M. Hirose and Y. Osaka: Appl. Phys. Lett. 37 (1980) 1084[AIP Scitation].
16. F. J. Kampas and R. W. Griffith: Appl. Phys. Lett. 39 (1981) 407[AIP Scitation].
17. J. Gonzalez-Hernandez and R. Tsu: Appl. Phys. Lett. 42 (1983) 90[AIP Scitation].
18. H. Okamoto, Y. Nitta, T. Yamaguchi and Y. Hamakawa: Sol. Energy Mater. 2 (1980) 313.
19. H. Scher and E. W. Montroll: Phys. Rev. B12 (1975) 2455[APS].
20. R. Messier and R. C. Ross: J. Appl. Phys. 53 (1982) 6220[AIP Scitation].
21. T. Tiedje and A. Rose: Solid State Commun. 37 (1981) 49[CrossRef].
22. W. E. Spear: Proc. 10th Int. Conf Amorphous & Liquid Semiconductors, Tokyo, 1983, J. Non-Cryst. Solids 59/60 (1983) 1.
23. H. Matsui, M. Kuwagaki, J. Shirafuji and Y. Inuishi: Tech. Rep. Osaka Univ. 33 (1983) 279.
24. R. A. Street: Adv. Phys. 30 (1981) 593.
25. M. H. Brodsky, M. Cardona and J. J. Cuomo: Phys. Rev. B16 (1977) 3556[APS].
26. D. C. Allan and J. D. Joannopoulos: Phys. Rev. Lett. 44 (1980) 40[APS].
27. G. D. Cody, T. Tiedje, B. Abeles, B. Brooks and Y. Goldstein: Phys. Rev. Lett. 47 (1981) 1480[APS].
28. J. Shirafuji, M. Kuwagaki and Y. Inuishi: Jpn. J. Appl. Phys. 23 (1984) L184[JSAP].
29. N. Ababou, E. Bustarret, A. Deneuville and M. Toulemonde: Proc. 10th Int. Conf Amorphous & Liquid Semiconductors, Tokyo, 1983, J. Non-Cryst. Solids 59/60 (1983) 803.
30. C. H. Seager and T. G. Castner: J. Appl. Phys. 49 (1978) 3879[AIP Scitation].
31. M. Kuwagaki, J. Shirafuji and Y. Inuishi: to be published. in Solid State Commun. (1984)
32. N. Hata, S. Hamasaki, H. Oheda, A. Matsuda, H. Okushi and K. Tanaka: Jpn. J. Appl. Phys. 20 (1981) L793[JSAP].