Jpn. J. Appl. Phys. 23 (1984) pp. 564-569 |Next Article| |Table of Contents|
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Nb-Oxide-Pb Josephson Tunnel Junctions Fabricated Using CF4 Cleaning Process (II)
Yujiro Kato and
Osamu Michikami
Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
(Received December 23, 1983; accepted for publication February 25, 1984)
The rf plasma cleaning conditions using a CF4 cleaning process (CFCP) giving high-quality junctions are discussed. The C-F radical chemical reaction provides a clean, damage-free Nb surface which is protected from oxygen dissolution by a carbon layer. The carbon layer is possibly effective in forming a high-quality tunnel oxide. The dependence of the maximum dc Josephson current on an external magnetic field shows a uniform current distribution. The total critical current spread was measured in arrays of 50 series-connected junctions with an area of 10×10 µm2 and was found to be within ±2.5% for the best sample at a mean current density of 10.6 kA/cm2.
URL:
http://jjap.jsap.jp/link?JJAP/23/564/
DOI: 10.1143/JJAP.23.564
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