Jpn. J. Appl. Phys. 23 (1984) pp. 622-627  |Next Article|  |Table of Contents|
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Defect Photoluminescence in Quenched High-Purity Silicon

Kenshiro Nakashima

(Received November 2, 1983; accepted for publication February 25, 1984)

The quenching of high-purity p-type silicon result in the introduction of several emission lines, at 0.98 eV, 0.92 eV, 0.86 eV, and 0.81 eV, which correlate well with those formerly observed in deformed silicon. These quenched-in emission lines are thermally unstable, in contrast to those in deformed silicon, and vanish on annealing below 200°C. The dislocation density and acceptor concentrations in as-grown samples have no influence on either the formation or the annihilation of the defect responsible for the emission line at 0.98 eV. The activation energy for the annealing of this center is estimated to be about 0.5 eV. It is indicated that none of the emission lines are due to impurity contaminations, but that all are due to quenched-in defects produced during the quenching process. It is suggested that a point defect and/or defect clusters captured in the dislocation core are responsible for the emission line at 0.98 eV.

URL: http://jjap.jsap.jp/link?JJAP/23/622/
DOI: 10.1143/JJAP.23.622

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