Jpn. J. Appl. Phys. 23 (1984) pp. 634-638  |Next Article|  |Table of Contents|
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CW Laser Annealing of InP

M. Mizuta and J. L. Merz

(Received November 28, 1983; accepted for publication January 28, 1984)

CW Ar⁺ laser annealing is used to activate semi-insulating InP after ion-implantation with Se. Electrical activation has been measured for a wide range of implant doses (3×10¹²–5×10¹⁵ cm^-2) using a phosphosilicate glass cap during laser annealing. The dependence of the resulting electrical properties on laser power and scan speed are investigated in terms of surface decomposition and slip line formation. Successive anodic oxidation coupled with Hall measurements has demonstrated that there is no impurity redistribution during CW laser annealing.

URL: http://jjap.jsap.jp/link?JJAP/23/634/
DOI: 10.1143/JJAP.23.634

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