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Jpn. J. Appl. Phys. 23 (1984) pp. L165-L166  |Next Article|  |Table of Contents|
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Letter

Pd–Ni–Si–Be–B Liquid Metal Ion Source for Maskless Ion Implantation

Hiroshi Arimoto, Akira Takamori, Eizo Miyauchi and Hisao Hashimoto

Optoelectronics Joint Research Laboratory

(Received January 7, 1984; accepted for publication February 25, 1984)

A new type of alloyed liquid metal ion source for maskless ion implantation into III-V compound semiconductors has been developed. An alloy consisting of Pd, Ni, Si, Be and B is used as the liquid metal for this ion source, which can offer B ions for device isolation as well as Si ions (n-type dopant) and Be ions (p-type dopant) from a single emitter tip. With this ion source, a submicron width high resistivity layer has been obtained by implantation of B ions using a beam of 0.1 µm diameter.

URL: http://jjap.jsap.jp/link?JJAP/23/L165/
DOI: 10.1143/JJAP.23.L165

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