Jpn. J. Appl. Phys. 23 (1984) pp. L245-L247 |Next Article| |Table of Contents|
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Perpendicular Magnetic Anisotropy in γ-(Fe1-xOsx)2O3 Thin Films
Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
(Received February 24, 1984; accepted for publication April 21, 1984)
This letter reports preparation of γ-(Fe1-xOsx)2O3 thin films that have easy axis of magnetization normal to the film plane. This unusual condition was the result of magnetic annealing under an external field of 10 kOe perpendicular to the film plane. The optimum annealing temperature and Os content, x, to obtain film with a large perpendicular anisotropy were about 400°C and 0.05, respectively. Read/write characteristic measurement of film with ring head exhibited a dipulse waveform, confirming perpendicular magnetic recording.
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