Jpn. J. Appl. Phys. 23 (1984) pp. L280-L282 |Next Article| |Table of Contents|
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Highly Conductive and Transparent Aluminum Doped Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering
Department of Electrical Engineering, Kanazawa Institute of Technology
(Received February 20, 1984; accepted for publication April 21, 1984)
Highly conductive films of Al-doped ZnO have been prepared by rf magnetron sputtering of a ZnO target with Al2O3 dopant of 1–2 wt% in content added. Films with resistivity as low as 2×10-4 Ωcm and transmittance above 80% at the wavelength between 400 and 800 nm can be produced on low temperature substrate with a relatively high deposition rate. It is shown that a stable resistivity for use in various ambients at high temperature can be attained for the films. The characteristic features of Al-doped ZnO films are their high carrier concentration and low mobility in comparison with non-doped ZnO films.
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