Jpn. J. Appl. Phys. 23 (1984) pp. L527-L530 |Next Article| |Table of Contents|
|Full Text PDF (535K)| |Buy This Article|
Study of Thermal Symmetry in Czochralski Silicon Melt under a Vertical Magnetic Field
Atsugi Electrical Communication Laboratory, Nippon Telegraph & Telephone Public Corporation
(Received March 12, 1984; accepted for publication July 21, 1984)
A study is made of the effects of a vertical magnetic field on thermal symmetry in a Czochralski silicon melt. By application of a magnetic field of 2500 Oe, thermal asymmetry is reduced to about 1/2 that at 0 Oe, and isothermal contours become concentric circles. A model is proposed where a vertical magnetic field suppresses asymmetric thermal convection which degrades thermal symmetry, and heat transfer in the stagnant melt is dominated by symmetric heat conduction.
- K. Hoshi, T. Suzuki, Y. Okubo and N. Isawa: Extended Abstracts, Electrochem. Soc. Spring Meeting (The Electrochem. Soc., Pennington, 1980) Vol. 80–1, p. 811.
- A. F. Witt, C. J. Hermann and H. C. Gatos: J. Mater. Sci. 5 (1970) 822.
- K. Hoshi, N. Isawa and T. Suzuki: Proceedings for 20th Semiconductor Technical School in Japan (1982) p. 181 [in Japanese].
- H. Hirata, K. Hoshikawa and N. Inoue: Abstracts, ACCG6/ICVGE-6 (American Associ. for Crystal Growth, Atlantic City, 1984).
- H. Hirata and K. Hoshikawa: Japanese Patent, Open No. 57-149894 (Received March 9, 1981).
- K. Hoshikawa:
Jpn. J. Appl. Phys. 21 (1982) L545[JSAP].
- K. Hoshikawa, H. Kohda and H. Hirata:
Jpn. J. Appl. Phys. 23 (1984) L38[JSAP].
- I. E. Campble: High-Temperature Technology (John Wiley & Sons, Inc., New York, 1957) p. 98.
- W. E. Langlois and K. J. Lee: IBM J. Res. Develop. 27 (1983) 281.
- Y. Nakagawa: Proc. Roy. Soc. (London) A, 240 (1957) 108.