Jpn. J. Appl. Phys. 23 (1984) pp. L623-L624 |Next Article| |Table of Contents|
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Letter
Disordering of Si-Doped AlAs/GaAs Superlattice by Annealing
Mitsuo Kawabe,
Nobuyuki Matsuura,
Norisato Shimizu,
Fumio Hasegawa and
Yasuo Nannichi
Institute of Materials Science, University of Tsukuba
(Received June 16, 1984; accepted for publication July 21, 1984)
Effect of Si-doping levels and annealing temperature on disordering of 150-Å AlAs/150-Å GaAs superlattices is studied. The doping level of 4×1018 cm-3 cause disorder for 800°C, 2 h annealing, while the doping level of 1×1018 cm-3 does not induce disorder on this annealing condition. A superlattice which is doped with 1×1019 Si cm-3 disintegrates after 650°C, 2 h annealing and the diffusion coefficient of Al–Ga interdiffusion is estimated to be 3×10-17 cm2s-1. For 800°C, 2 h annealing the two undoped AlAs/GaAs layers adjacent to the doped region are disordered by Si diffusion.
URL:
http://jjap.jsap.jp/link?JJAP/23/L623/
DOI: 10.1143/JJAP.23.L623
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