Jpn. J. Appl. Phys. 23 (1984) pp. L846-L848 |Next Article| |Table of Contents|
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Letter
Structure Analysis of Oval Defect on Molecular Beam Epitaxial GaAs Layer by Cross-Sectional Transmission Electron Microscopy Observation
Hiroshi Kakibayashi,
Fumio Nagata,
Yoshifumi Katayama and
Yasuhiro Shiraki
Central Research Laboratory, Hitachi, Ltd.
(Received September 19, 1984; accepted for publication October 27, 1984)
The fine structure of a surface defect on GaAs grown by molecular beam epitaxy (MBE) is analyzed by transmission electron microscopy (TEM) observing cross-sectional views of the specimen. The defect has a pyramid structure consisting of four {111} stacking fault planes whose Burgers vectors are a0/6 <112>, a0/6 <112>, a0/6 <112> and a0/6 <\overline112>. Because a defect of this type always starts at the GaAs substrate surface, the origin is thought to be a point defect or atomic contamination on the surface.
URL:
http://jjap.jsap.jp/link?JJAP/23/L846/
DOI: 10.1143/JJAP.23.L846
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