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Jpn. J. Appl. Phys. 23 (1984) pp. L901-L903  |Next Article|  |Table of Contents|
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Letter

Random Distribution of Ga and Al Atoms in MBE Grown (Al_0.5Ga_0.5)As

Yasuharu Kashihara, Nobuo Kashiwagura, Makoto Sakata, Jimpei Harada and Tatsuo Arii¹

Department of Applied Physics, Nagoya University
¹National Institute for Physiological Sciences

(Received September 26, 1984; accepted for publication November 24, 1984)

The observation of diffuse scattering due to short-range order (SRO) between Al and Ga atoms in (Al_0.5Ga_0.5)As which were grown by molecular beam epitaxy, has been made using both electron and X-ray diffraction methods. Only diffuse streaks along the <110> directions were detected, the origin of which must be low frequency transverse acoustic phonons. The absence of SRO diffuse scattering is considered evidence of random distribution of Al and Ga atoms in this substance, consistent with the thermodynamical calculation by Onabe (K. Onabe, Jpn. J. Appl. Phys. 21 (1982) L323).

URL: http://jjap.jsap.jp/link?JJAP/23/L901/
DOI: 10.1143/JJAP.23.L901

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References | Citing Articles (6)

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