Jpn. J. Appl. Phys. 24 (1985) pp. L17-L20
|Table of Contents|
|Abstract| |Full Text PDF (594K)| |Buy This Article|
Thermal Stability of a Short Period AlAs/n-GaAs Superlattice
Naotaka Iwata, Yoshishige Matsumoto and Toshio Baba
Articles citing this article
The list of citing articles is based on data provided by CrossRef Cited-by Linking. Any errors or omissions are the responsibility of the primary publisher.
-
Ferroelectrics 412 (2011) 45
- Inelastic Neutron Scattering Study of Ferroelectric Phase Transition in Lithium Heptagermanate (Li2Ge7O15)
-
- Mitsuo W. Takeda, Yukio Noda, and Toshihisa Yamaguchi
-
Integrated Ferroelectrics 33 (2001) 221
- Ferroelectric properties of SOL-GEL derived thin solid film of barium titanate on ITO-glass
-
- X. Q. Han, C. H. Kam, S. D. Cheng, Y. Zhou, H. X. Zhang, K. Pita, Y. C. Chan, and Y. L. Lam
-
Ferroelectrics 231 (1999) 67
- The crystallinity, the surface morphology and the optical constant of sol-gel derived thin films of BaTio3 on SiO2/Si and Si substrates
-
- K. Pita, S. D. Cheng, C. H. Kam, Y. Zhou, Y. L. Lam, and Y. C. Chan
-
Journal of Applied Physics 81 (1997) 3601
- Electroreflectance study of effects of indium segregation in molecular-beam-epitaxy-grown InGaAs/GaAs
-
- K. Chattopadhyay, J. Aubel, S. Sundaram, J. E. Ehret, R. Kaspi, and Keith R. Evans
-
Physics of the Solid State 39 (1997) 1645
- Specific features of the phase transition in the weak ferroelectric Li2Ge7O15
-
- A. Yu. Kudzin, M. D. Volnyanskii, and I. A. Busoul
-
Japanese Journal of Applied Physics 33 (1994) L207
- First Observation of Negative Differential Resistance in Surface Tunnel Transistors
-
- Tetsuya Uemura and Toshio Baba
-
Applied Physics Letters 62 (1993) 3372
- Preparation of ferroelectric BaTiO3 thin films on polycrystalline BaPbO3 substrates by sol-gel processing and their electrical properties
-
- M. Kuwabara, S. Takahashi, and T. Kuroda
-
Applied Physics Letters 57 (1990) 1321
- Characterization of DX centers in selectively doped GaAs-AlAs superlattices
-
- S. Ababou, J. J. Marchand, L. Mayet, G. Guillot, and F. Mollot
-
Journal of Applied Physics 68 (1990) 3343
- Selectively Se-doped AlGaAs/GaAs heterostructures with reduced DX-center concentrations grown by molecular-beam epitaxy
-
- Kazuo Kondo, Tomonori Ishikawa, and Takeshi Maeda
-
Japanese Journal of Applied Physics 28 (1989) 1
- A Pseudopotential Approach to the Formation of Group IV Interstitial in III-V Semiconductors
-
- Tomonori Ito
-
Physical Review B 40 (1989) 6149
- Surface segregation of third-column atoms in group III-V arsenide compounds: Ternary alloys and heterostructures
-
- J. Moison, C. Guille, F. Houzay, F. Barthe, and M. Van Rompay
-
Journal of Applied Physics 64 (1988) 1519
- Fundamental oscillations up to 200 GHz in resonant tunneling diodes and new estimates of their maximum oscillation frequency from stationary-state tunneling theory
-
- E. R. Brown, W. D. Goodhue, and T. C. L. G. Sollner
-
Applied Physics Letters 50 (1987) 83
- Millimeter-band oscillations based on resonant tunneling in a double-barrier diode at room temperature
-
- E. R. Brown, T. C. L. G. Sollner, W. D. Goodhue, and C. D. Parker
-
Japanese Journal of Applied Physics 26 (1987) 1097
- Electrical and Optical Properties of Si Doped GaAs Grown by Molecular Beam Epitaxy on (311) Substrates
-
- Takeshi Takamori, Toshiaki Fukunaga, Junji Kobayashi, Koichi Ishida and Hisao Nakashima
-
Journal of Applied Physics 62 (1987) 1925
- The effects of substrate temperature on the donor ionization energy and on the material properties of selectively doped short-period GaAs:Si/AlAs superlattices
-
- Takafumi Yao, Yasumasa Okada, Susumu Matsui, Hiroki Nagase, and Kohtaro Ishida
-
Physical Review B 35 (1987) 3984
- Self-consistent calculations of the two-dimensional electron density in modulation-doped superlattices
-
- V. Gomes, A. Chaves, J. Leite, and J. Worlock
-
Surface Science 189-190 (1987) 1041
- Intermixing at InAs/GaAs and GaAs/InAs interfaces
-
- C. Guille, F. Houzay, J.M. Moison, and F. Barthe
-
Japanese Journal of Applied Physics 25 (1986) L349
- DX Center-Like Trap in Selectively Si-Doped AlAs/GaAs Superlattices
-
- Naotaka Iwata, Yoshishige Matsumoto, Toshio Baba and Masaki Ogawa
-
Journal of Applied Physics 59 (1986) 526
- AlAs/n-GaAs superlattice and its application to high-quality two- dimensional electron gas systems
-
- Toshio Baba, Takashi Mizutani, and Masaki Ogawa
-
Physical Review B 33 (1986) 4320
- DX center: Crossover of deep and shallow states in Si-doped AlxGa1-xAs
-
- Atsushi Oshiyama and Shuhei Ohnishi
-
Surface Science 174 (1986) 408
- Shallow-deep instability of donor impurity states in Al-Ga-As system and its control by superlattice structure
-
- Toshio Baba, Masaki Ogawa, and Takashi Mizutani
-
Japanese Journal of Applied Physics 24 (1985) 1498
- Ion-Species Dependence of Interdiffusion in Ion-Implanted GaAs-AlAs Superlattices
-
- Yoshiro Hirayama, Yoshifumi Suzuki and Hiroshi Okamoto