Jpn. J. Appl. Phys. 24 (1985) pp. L21-L23 |Next Article| |Table of Contents|
|Full Text PDF (290K)| |Buy This Article|
Letter
The Effects of Carrier Concentration Dependent Diffusion Coefficient on the Lateral Profile of Injected Carriers in Stripe Geometry Lasers
Ch. Tanguy
THOMSON-CSF, Division Composants Hybrides et Microondes, Domaine de Corbebille
(Received October 1, 1984; accepted for publication December 15, 1984)
For the first time, a model is presented that takes the effects of concentration-dependent coefficient diffusion into account to determine the lateral distribution of injected carriers in an active layer of gain-guided stripe-geometry lasers. In high carrier concentration cases, computed examples demonstrate the lack of accuracy of the other classical models.
URL:
http://jjap.jsap.jp/link?JJAP/24/L21/
DOI: 10.1143/JJAP.24.L21
- W. T. Tsang:
J. Appl. Phys. 49 (1978) 1031[AIP Scitation].
- W. B. Joyce:
J. Appl. Phys. 51 (1980) 2394[AIP Scitation].
- H. Yonezu, I. Sakuma, K. Kobayashi, T. Kamejima, M. Ueno and Y. Nannichi:
Jpn. J. Appl. Phys. 12 (1973) 1585[JSAP].
- W. B. Joyce and R. W. Dixon:
Appl. Phys. Lett. 31 (1977) 354[AIP Scitation].
- M. Yano, H. Ishikawa and M. Yakusagawa:
J. Appl. Phys. 53 (1982) 3433[AIP Scitation].
- R. S. Tucker: Proc. Inst. Electr. Eng. 128 (1981) 101.
- W. B. Joyce:
J. Appl. Phys. 51 (1982) 7235[AIP Scitation].
- J. F. Young and H. M. Van Driel:
Phys. Rev. B26 (1982) 2147[APS].