Jpn. J. Appl. Phys. 24 (1985) pp. L21-L23  |Next Article|  |Table of Contents|
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Letter

The Effects of Carrier Concentration Dependent Diffusion Coefficient on the Lateral Profile of Injected Carriers in Stripe Geometry Lasers

Ch. Tanguy

THOMSON-CSF, Division Composants Hybrides et Microondes, Domaine de Corbebille

(Received October 1, 1984; accepted for publication December 15, 1984)

For the first time, a model is presented that takes the effects of concentration-dependent coefficient diffusion into account to determine the lateral distribution of injected carriers in an active layer of gain-guided stripe-geometry lasers. In high carrier concentration cases, computed examples demonstrate the lack of accuracy of the other classical models.

URL: http://jjap.jsap.jp/link?JJAP/24/L21/
DOI: 10.1143/JJAP.24.L21


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References | Citing Articles (2)

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  2. W. B. Joyce: J. Appl. Phys. 51 (1980) 2394[AIP Scitation].
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