Quick Jump

Jpn. J. Appl. Phys. 24 (1985) pp. L323-L325  |Next Article|  |Table of Contents|
|Full Text PDF (453K)| |Buy This Article|

Letter

A New MOS Phototransistor Operating in a Non-Destructive Readout Mode

Kazuya Matsumoto, Tsutomu Nakamura, Atsushi Yusa and Shohei Nagai

Olympus Optical Co. Ltd.

(Received February 7, 1985; accepted for publication April 20, 1985)

A new MOS phototransistor with high optical gain and non-destructive readout operation is proposed as a photosensor in an imaging device. The principle of this device is a conduction mechanism whereby an incident light changes the surface potential under the MOS gate and the electron current flowing in a buried channel is modulated by the surface potential. The device has a saturation exposure value of 0.1 lx·s, saturation output voltage of 500 mV at V_DD=2 V, the dynamic range of 50 dB with no signal processing and non-destructive readout operation.

URL: http://jjap.jsap.jp/link?JJAP/24/L323/
DOI: 10.1143/JJAP.24.L323

|Full Text PDF (453K)| |Buy This Article| Citation: Plain Text BiBTeX EndNote(RIS) RSS

---

References | Citing Articles (14)

1. W. S. Boyle and G. E. Smith: Bell Syst. Tech. J. 49 (1970) 487.
2. R. H. Dyck and G. P. Weckler: IEEE Trans. Electron Devices ED-15 (1968) 196.
3. J. Nishizawa, T. Tamamushi and S. Suzuki: Semiconductor Technology (Ohmsha, Tokyo, 1983) Vol. 8, Chap. 17, p. 219.
4. J. Nishizawa, T. Tamamushi and T. Ohmi: IEEE Trans. Electron Devices ED-26 (1979) 1970.
5. P. K. Chatterjee, G. W. Talyor and M. L. Malwah: IEEE Int. Electron Device Meeting, Late News (Washington, D.C. 1978).

---