Jpn. J. Appl. Phys. 24 (1985) pp. L498-L500  |Table of Contents|
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Surface Defect Formation in GaAs Layers Grown on Intentionally Contaminated Substrate by Molecular Beam Epitaxy

Nozomu Watanabe, Toshiaki Fukunaga, Keisuke L. I. Kobayashi and Hisao Nakashima

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