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Jpn. J. Appl. Phys. 24 (1985) pp. L507-L509  |Next Article|  |Table of Contents|
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Letter

Comparison of Sorption Process in Titanium and Vanadium Films

Ryosuke Konishi, Yoshinori Miyada and Hiroshi Sasakura

Department of Electronics, Faculty of Engineering, Tottori University

(Received April 11, 1985; accepted for publication June 22, 1985)

We observed the sorption process of hydrogen atoms beneath titanium and vanadium films using an electrical resistance method, AES and AEAPS.
Applying Toya's theory to our measurements of the resistance, we may derive that both r- and s-type adsorption states exist in titanium films, whereas only the r-type state seems to be present in vanadium films. From the results of AES and AEAPS, we may assume that the V-H bond is formed beneath the metal surface as is the Ti-H bond; nanely, the r-type adsorption state in the vanadium films is apparently present beneath the metal surface as well as the s-type adsorption state in the titanium films.

URL: http://jjap.jsap.jp/link?JJAP/24/L507/
DOI: 10.1143/JJAP.24.L507

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References | Citing Article (1)

1. M. den Boer, P. I. Cohen and R. L. Park: Surf. Sci. 70 (1978) 643.
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4. F. Liu and A. L. Companion: Surf. Sci., 137 (1984) 181.
5. H. Fujii and T. Okamoto: Nihon Buturi Gakkai Shi, 39 (1984) 657 [in Japanese].
6. T. A. Carlson: Photoelectron and Auger Spectroscopy (Plenum Press, New York, 1975).
7. P. W. Palmberg: Analytical Chem. 45 (1973) 549A.

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