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Jpn. J. Appl. Phys. 24 (1985) pp. L513-L515  |Next Article|  |Table of Contents|
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Letter

Boron Doping Effects in Lateral Solid Phase Epitaxy of Amorphous Si Films

Hiroshi Ishiwara, Akihiro Tamba, Hiroshi Yamamoto and Seijiro Furukawa

Graduate School of Science and Engineering, Tokyo Institute of Technology

(Received April 17, 1985; accepted for publication June 22, 1985)

Lateral solid phase epitaxy (L-SPE) of boron (B) doped amorphous Si films onto SiO₂ patterns was investigated. The L-SPE rate in B-doped films was found to be about 8 times higher than that in undoped films and the L-SPE length measured from the pattern edge was twice enhanced by the doping effect. It was also found that the L-SPE rate in B-doped samples is proportional to the amount of B atoms introduced in the Si film, if the maximum concentration of B atoms does not exceed the solid solubility limit in Si.

URL: http://jjap.jsap.jp/link?JJAP/24/L513/
DOI: 10.1143/JJAP.24.L513

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References | Citing Articles (12)

1. H. Ishiwara, H. Yamamoto, S. Furukawa, M. Tamura and T. Tokuyama: Appl. Phys. Lett. 43 (1983) 1028[AIP Scitation].
2. Y. Kunii and M. Tabe: Jpn. J. Appl. Phys. 24 (1985) L352[JSAP].
3. H. Yamamoto, H. Ishiwara and S. Furukawa: Appl. Phys. Lett. 46 (1985) 268[AIP Scitation].
4. L. Csepregi, E. F. Kennedy, T. J. Gallagher, J. W. Mayer and T. W. Sigmon: J. Appl. Phys. 48 (1977) 4234[AIP Scitation].
5. I. Suni, G. Göltz, M. G. Grimaldi, M-A. Nicolet and S. S. Lau: Appl. Phys. Lett. 40 (1982) 269[AIP Scitation].

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