Jpn. J. Appl. Phys. 24 (1985) pp. L513-L515 |Next Article| |Table of Contents|
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Boron Doping Effects in Lateral Solid Phase Epitaxy of Amorphous Si Films
Graduate School of Science and Engineering, Tokyo Institute of Technology
(Received April 17, 1985; accepted for publication June 22, 1985)
Lateral solid phase epitaxy (L-SPE) of boron (B) doped amorphous Si films onto SiO2 patterns was investigated. The L-SPE rate in B-doped films was found to be about 8 times higher than that in undoped films and the L-SPE length measured from the pattern edge was twice enhanced by the doping effect. It was also found that the L-SPE rate in B-doped samples is proportional to the amount of B atoms introduced in the Si film, if the maximum concentration of B atoms does not exceed the solid solubility limit in Si.
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