Jpn. J. Appl. Phys. 24 (1985) pp. L853-L854 |Next Article| |Table of Contents|
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Letter
A New Functional, Resonant-Tunneling Hot Electron Transistor (RHET)
Naoki Yokoyama,
Kenichi Imamura,
Shunichi Muto,
Satoshi Hiyamizu and
Hidetoshi Nishi
Fujitsu Limited
(Received September 9, 1985; accepted for publication October 26, 1985)
Abstract-A new functional, resonant-tunneling hot electron transistor (RHET) is demonstrated in which electrons are injected from emitter to base by resonant-tunneling through a quantum well, and are near-ballistically transferred to a collector. The main feature of this device is a peaked collector-current characteristic with respect to the base-emitter voltage. This enables us to build a frequency multiplier or an Exclusive-NOR gate using only one transistor.
URL:
http://jjap.jsap.jp/link?JJAP/24/L853/
DOI: 10.1143/JJAP.24.L853
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