Jpn. J. Appl. Phys. 24 (1985) pp. L965-L967 |Next Article| |Table of Contents|
|Full Text PDF (415K)| |Buy This Article|
Letter
Electrical Properties of Ga Ion Beam Implanted GaAs Epilayer
Yoshiro Hirayama and
Hiroshi Okamoto
NTT Electrical Communications Laboratories
(Received November 1, 1985; accepted for publication November 16, 1985)
Resistivity enhancement by 5 orders or more was realized by Ga focused ion beam implantation into n+ and p- GaAs epilayers. For originally n+ epilayers, this resistivity enhancement is maintained after annealing as high as 800°C. However this enhancement disappears after annealing at above 650°C for p+ epilayer. This property makes GaAs high resistive only in a limited area whose minimum dimension is 0.1 µm or less, and is attractive for a device fabrication process to electrically isolate integrated elements.
URL:
http://jjap.jsap.jp/link?JJAP/24/L965/
DOI: 10.1143/JJAP.24.L965
- E. Miyauchi, H. Arimoto, H. Hashimoto and T. Utsumi: J. Vac. Sci. Technol. B1 (1983) 1113.
- H. Arimoto, A. Takamori, E. Miyauchi and H. Hashimoto:
Jpn. J. Appl. Phys. 23 (1984) L165[JSAP].
- H. Arimoto, A. Takamori, E. Miyauchi and H. Hashimoto: J. Vac. Sci. Technol. B3 (1985) 54.
- R. L. Kubena, R. L. Seliger and E. H. Stevens: Thin Solid Films 92 (1982) 165.
- H. Morimoto, Y. Sasaki, Y. Watakabe and T. Kato:
J. Appl. Phys. 57 (1985) 159[AIP Scitation].
- P. H. RaMarche, R. Levi-Setti and Y. L. Wang: J. Vac. Sci. Technol. B1 (1983) 1056.
- I. L. Berry and A. L. Cabiglia: J. Vac. Sci. Technol. B1 (1983) 1059.
- Y. Hirayama, Y. Suzuki, S. Tarucha and H. Okamoto:
Jpn. J. Appl. Phys. 24 (1985) L516[JSAP].
- P. Dansas:
J. Appl. Phys. 58 (1985) 2212[AIP Scitation].
