Jpn. J. Appl. Phys. 25 (1986) pp. 1130-1131  |Next Article|  |Table of Contents|
|Full Text PDF (260K)| |Buy This Article|

Short Note

Effect of Heat Treatment in Zn Vapor on the Electrical Properties of ZnO Single Crystals Containing Tri-Valent Donor Impurities

Yasuo Kanai

Tokai University, Institute of Research and Development

(Received February 28, 1986; accepted for publication May 24, 1986)

By a heat treatment in Zn vapor, the electron density of ZnO crystals containing tri-valent donor impurities increases to about twice the value of as-grown crystals. This effect has been interpreted as the result of the occupation of Zn vacancies in as-grown crystals by Zn atoms.

URL: http://jjap.jsap.jp/link?JJAP/25/1130/
DOI: 10.1143/JJAP.25.1130


|Full Text PDF (260K)| |Buy This Article| Citation:


References | Citing Articles (3)

  1. For example, F. A. Kroeger and H. J. Vink: Solid State Phys. 3 (1956) 307.
  2. J. W. Nielsen and E. F. Dearborn: J. Phys. Chem. 64 (1960) 1762.
  3. R. Stratton: J. Phys. Chem. Solids 23 (1962) 1011[CrossRef].
  4. H. Brooks: Phys. Rev. 83 (1951) 879[APS].
  5. H. Brooks: Adv. Electron. & Electron Phys. 7 (1955) 85.
  6. G. Heiland, E. Mollwo and F. Stoeckmann: Solid State Phys. 8 (1959) 191.
  7. S. Trokman, A. Many and Y. Goldstein: J. Phys. Chem. Solid 42 (1981) 937.
  8. Semiconductors, ed. N. B. Hanny (Reinhold Publishing Corp. New York, 1959) p. 581.

|TOP|  |Next Article|  |Table of Contents| |JJAP Home|
Copyright © 2013 The Japan Society of Applied Physics
Contact Information